Study of the charge sensing node in the MAPS for therapeutic carbon ion beams

Beam monitoring system in heavy ion therapy facilities ensures the beam energy deposition can accurately cover the dedicated tumour region. For the purpose of building a high-precision beam monitoring system, a Monolithic Active Pixel Sensor (MAPS) is under development. The charge sensing node in the MAPS is formed by an n-well −p⁻ epitaxial layer junction and it collects charge by drift and diffusion. In order to optimize the performance of the charge sensing node, the depletion region, the diode capacitance, the charge collection efficiency and the charge collection time have been studied with TCAD simulations. This paper discusses the simulation results with different bias voltage, node structures and heavy ion hitting locations.