Published December 1994
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Study of physical sputtering systematics
Description
Sputtering of solids surfaces is very important for a large number of application. For instance, the interaction particle with plasma wall in fusion device will induce the surface etching and produce the impurities. The sputtering yields for carbon and nickel solid surfaces with H+, D+, T+ and He+ projectiles at normal incidence were calculated. The sputtering yields for many projectile-target combination from threshold energy to about 100 KeV at normal incidence are computed further. The sputtering yields of Si by various projectiles and the sputtering yields of various targets by H+ are presents. The sputtering systematics is discussed from calculated results. (2 figs.)
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Additional details
Publishing Information
- Imprint Title
- Communication of nuclear data progress: No.12 (1994)
- Imprint Pagination
- 100 p.
- Journal Page Range
- p. 91-93.
- Report number
- CNIC--00922
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 27003621
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CARBON; DEUTERIUM IONS; HELIUM IONS; HYDROGEN IONS 1 PLUS; ION-ATOM COLLISIONS; NUCLEAR REACTION KINETICS; SILICON; SOLIDS; SPUTTERING; SURFACES; SYSTEMS ANALYSIS; THEORETICAL DATA; TRITIUM IONS
- Descriptors DEC
- ATOM COLLISIONS; CATIONS; CHARGED PARTICLES; COLLISIONS; DATA; ELEMENTS; HYDROGEN IONS; INFORMATION; ION COLLISIONS; IONS; KINETICS; NONMETALS; NUMERICAL DATA; REACTION KINETICS; SEMIMETALS
Optional Information
- Secondary number(s)
- CNDC--0015; INDC(CPR)--033/L.