Published 1995 | Version v1
Miscellaneous Open

Transient diffusion of dopant in preamorphised Si ; the role of EOR defects

Creators

  • 1. CEMES-LOE and LAAS, CNRS, Cedex (France)
  • 2. CNET, (France Telecom), Cedex (France)

Description

Short communication

Files

28080462.pdf

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Part of:
Ninth international conference on ion beam modification of materials. Book of abstracts

Additional details

Additional titles

Augmented title (English)
End-of-Range defects

Publishing Information

Publisher
Accademic Press.
Imprint Title
Ninth international conference on ion beam modification of materials. Book of abstracts
Imprint Pagination
452 p.
Journal Page Range
p. 9005.
Report number
INIS-AU--0004

Conference

Title
9. international conference on ion beam modification of materials.
Acronym
IBMM'95
Dates
5-10 Feb 1995.
Place
Canberra (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
28080462
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANNEALING; BORON; CRYSTAL DEFECTS; DIFFUSION; INTERSTITIALS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SILICON; TRANSIENTS; TRAPS
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS

Optional Information