Photoelectric parameters of heterojunctions ITO-CdGeP2

Fotosensitive n-n and n-p-junctions on the base of CdGsP2 crystals and layers of indium and tin oxides were prepared by the reactive cathode spray technique. Photoelectric properties of the junctions were studied in natural and linear-polarized light, temperature dependence of photosensitivity was measured as well within 80-400 K range. Heterojunction polarized parameters were determined, the results are analyzed, using band model and selective rules of interband junctions in CdGeP2. Applicability of n-n-heterojunctions as polarimetric photodetectors is shown