Published 1988
| Version v1
Miscellaneous
Twinning in CdTe (111) films on GaAs (100) substrates
Creators
- 1. AN SSSR, Moscow (USSR). Inst. Kristallografii
- 2. AN SSSR, Novosibirsk (USSR). Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Двойникование в пленках CdTe (111) на подложках GaAs (100)
Publishing Information
- Imprint Title
- Molecular beam epitaxy. Surface. Vol. 4
- Journal Page Range
- p. 52-53.
- Report number
- INIS-SU--111/A
Conference
- Title
- 7. All-union conference on crystal growth. Symposium on molecular beam epitaxy.
- Dates
- 14-19 Nov 1988.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20063225
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CADMIUM TELLURIDES; EPITAXY; FILMS; GALLIUM ARSENIDES; INTERFACES; MOLECULAR BEAMS; MONOCRYSTALS; SUBSTRATES; TWINNING
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; GALLIUM COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note; 2 ref. Imprint:Molekulyarno-luchevaya ehpitaksiya. Poverkhnost'. Tom 4.;Rasshirennye tezisy.