Published February 11, 1999
| Version v1
Journal article
Performance of microdot (MDOT) detectors with conductive coating of doped amorphous silicon carbide (a-Si:C:H)
Creators
- 1. Physics Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States)
- 2. Engineering Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States)
Description
A conductive coating of doped amorphous silicon carbide (a-Si:C:H) has been used in the fabrication of microdot (MDOT) detectors, to minimize the defocusing, away from the anodes, of the drifting primary electrons. This defocusing is caused by the existence of the readout line passing below the insulating layer. The defocusing effect and other effects of the conductive coating on the performance of these detectors fabricated in this way have been investigated
Additional details
Identifiers
- PII
- S0168900298009619;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 422
- Journal Issue
- 1-3
- Journal Page Range
- p. 296-299
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Kazakhstan
- INIS RN
- 34040712
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- AMORPHOUS STATE; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL COATING; ELECTRON DRIFT; FABRICATION; FOCUSING; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SILICON COMPOUNDS; SURFACE COATING
Optional Information
- Copyright
- Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.