Published 1996
| Version v1
Journal article
Optical study of MBE grown undoped Si-Si1-xGex/Si superlattices
Creators
- 1. Institute for Low Temperature Physics and Engineering, National Academy of Sciences Ukraine, Kharkov (Ukraine)
- 2. Department of Physics, University of Warwick, Coventry (United Kingdom)
Description
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si0.78Ge0.22 superlattices grown by molecular beam epitaxy on (001) at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thickness, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media. (author)
Additional details
Publishing Information
- Journal Title
- Acta Physica Polonica. Series A
- Journal Volume
- 90
- Journal Issue
- 5
- Journal Page Range
- p. 1045-1049
- ISSN
- 0587-4246
Conference
- Title
- 25. International School of Physics of Semiconducting Compounds. Part 2
- Dates
- 27-31 May 1996
- Place
- Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 30007715
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELLIPSOMETRY; GERMANIUM ALLOYS; INTERFACES; MEETINGS; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SPECTROSCOPY; SILICON; SILICON ALLOYS; SUPERLATTICES
- Descriptors DEC
- ALLOYS; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; LASER SPECTROSCOPY; MEASURING METHODS; QUASI PARTICLES; SEMIMETALS; SPECTROSCOPY
Optional Information
- Contract/Grant/Project number
- INTAS-93-1403-ext; USTC project no. KREMNII-94-ext
- Notes
- 10 refs, 2 figs, 1 tab