Published August 31, 2010
| Version v1
Journal article
Characteristics of n-type ZnO nanorods on top of p-type poly(3-hexylthiophene) heterojunction by solution-based growth
- 1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China)
- 2. Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
- 3. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
- 4. Graduate Institute of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
- 5. Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
- 6. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
Description
We report that ZnO nanorods (NRs) are grown on an organic layer of poly(3-hexylthiophene) (P3HT) using a modified seeding layer. Thus, ZnO NRs/P3HT heterojunction light-emitting diodes could be fabricated using the hydrothermal method, in which ZnO acts as an n-type material and P3HT as a p-type material. The ZnO NRs improve the electron transportation in the devices. A three-fold enhancement of current density of the device is observed due to the NRs formed on the P3HT. The electroluminescence (EL) of the optimized ZnO-based device is 1.5 times larger than that without NRs. The influence of the P3HT thickness for the EL spectrum is also discussed.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.06.005Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.06.005;
- PII
- S0040-6090(10)00835-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 21
- Journal Page Range
- p. 6066-6070
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060046
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTROLUMINESCENCE; HETEROJUNCTIONS; HYDROTHERMAL SYNTHESIS; LAYERS; LIGHT EMITTING DIODES; NANOSTRUCTURES; P-N JUNCTIONS; POLYCYCLIC SULFUR HETEROCYCLES; SOLUTIONS; SPECTRA; SPIN-ON COATING; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; DISPERSIONS; EMISSION; HETEROCYCLIC COMPOUNDS; HOMOGENEOUS MIXTURES; LUMINESCENCE; MIXTURES; ORGANIC COMPOUNDS; ORGANIC SULFUR COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SURFACE COATING; SYNTHESIS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.