Published August 31, 2010 | Version v1
Journal article

Characteristics of n-type ZnO nanorods on top of p-type poly(3-hexylthiophene) heterojunction by solution-based growth

  • 1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China)
  • 2. Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  • 3. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  • 4. Graduate Institute of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  • 5. Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  • 6. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

Description

We report that ZnO nanorods (NRs) are grown on an organic layer of poly(3-hexylthiophene) (P3HT) using a modified seeding layer. Thus, ZnO NRs/P3HT heterojunction light-emitting diodes could be fabricated using the hydrothermal method, in which ZnO acts as an n-type material and P3HT as a p-type material. The ZnO NRs improve the electron transportation in the devices. A three-fold enhancement of current density of the device is observed due to the NRs formed on the P3HT. The electroluminescence (EL) of the optimized ZnO-based device is 1.5 times larger than that without NRs. The influence of the P3HT thickness for the EL spectrum is also discussed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.06.005

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.06.005;
PII
S0040-6090(10)00835-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
21
Journal Page Range
p. 6066-6070
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.