Published November 10, 2017 | Version v1
Journal article

Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing

  • 1. Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Campus de Cantoblanco, E-28049 Madrid (Spain)
  • 2. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands)
  • 3. International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga, 4715-330, Braga (Portugal)
  • 4. Department of Physics, University of Regensburg, Universitätsstrasse, Regensburg D-93040 (Germany)
  • 5. Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049, Madrid (Spain)
  • 6. ALBA Synchrotron Light Facility, Carrer de la Llum 2-26, Cerdanyola del Vallés, Barcelona E-08290 (Spain)
  • 7. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Campus de Cantoblanco, E-28049 Madrid (Spain)

Description

Two-dimensional (2D) semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of 2D materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI2 by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectroscopy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI2 and study their optoelectronic properties. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/aa8e5c

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
28
Journal Issue
45
Journal Page Range
[11 p.]
ISSN
0957-4484