Published June 5, 2006 | Version v1
Journal article Metadata-only

Growth evolution of Sr-silicide layers on Si(111) and Mg2Si/Si(111) substrates

Creators

  • 1. Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561 (Japan)
  • 2. Pulstec Industrial Co., Ltd., 7000-35 Techno-Land, Hosoe, Inasa, Shizuoka 431-1304 (Japan)
  • 3. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011 (Japan)

Description

Single phase Sr2Si layers were successfully grown on Mg2Si/Si substrates for the first time. The Sr2Si layers are formed by an interdiffusion process between the deposited Sr atoms and Mg2Si/Si substrates. It has been confirmed that the formation of the SrSi and SrSi2 phases was suppressed when the layers were grown on Mg2Si/Si substrates. On the other hand, when the layers were grown directly on Si substrates, multiple phase growth took place and the Sr-silicide layers were heavily cracked. The structural properties of the resultant Sr-silicide layers were examined. In addition, the growth evolution of the silicide phases is described

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.06.110;
PII
S0040-6090(05)01938-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
508
Journal Issue
1-2
Journal Page Range
p. 74-77
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
4. international conference on silicon epitaxy and heterostructures
Acronym
ICSI-4
Dates
23-26 May 2005
Place
Awaji Island, Hyogo (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38004685
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL GROWTH; DIFFUSION; INTERFACES; LAYERS; MAGNESIUM SILICIDES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; MAGNESIUM COMPOUNDS; SILICIDES; SILICON COMPOUNDS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.