Published 1975 | Version v1
Journal article Metadata-only

Twinning in annealed tellurium-implanted gallium arsenide crystals

Creators

  • 1. Surrey Univ., Guildford (UK)

Description

no abstract available

Additional details

Identifiers

DOI
10.1080/00337577508233015;

Publishing Information

Journal Title
Radiation Effects
Journal Volume
27
Journal Issue
1-2
Series
Radiat. Eff.
Journal Page Range
109-110
ISSN
0033-7579

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
7241452
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; DOPED MATERIALS; ELECTRON DIFFRACTION; ETCHING; GALLIUM ARSENIDES; HIGH TEMPERATURE; ION BEAMS; ION IMPLANTATION; LAYERS; MEDIUM TEMPERATURE; REFLECTION; SURFACES; TELLURIUM IONS; TWINNING
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; BEAMS; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; SCATTERING; SURFACE FINISHING

Optional Information

Notes
Short communication.; Updated automatically by Metadata and Full-Text Enrichment Agent