Published November 28, 2008 | Version v1
Journal article

Experimental evaluation of MgO sputtering yields by monochromatic Ne, Kr, or Xe ion beams

  • 1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
  • 2. National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)
  • 3. Image Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-naka-machi, Moriguchi, Osaka 570-8501 (Japan)

Description

Sputtering yields of microcrystalline magnesium oxide (MgO) by Ne, Kr, or Xe ion beams of normal incidence have been obtained experimentally as functions of injection energy in the range of 25-375 eV. MgO is widely used for barrier coating of plasma display panel (PDP) cells and its resistance against physical sputtering by various ion species, especially in the range of low injection energies, is valuable information for the development of highly efficient, long-lifetime PDP cells. It has been found that MgO sputtering yields depend very weakly on the mass of incident species among Ne, Ar, Kr, and Xe ions in this energy range. The results indicate that a standard collision cascade model with binary collisions may not be used to account for physical sputtering mechanisms of MgO in the energy range examined here

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2008.08.127

Additional details

Identifiers

DOI
10.1016/j.tsf.2008.08.127;
PII
S0040-6090(08)00984-X;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
517
Journal Issue
2
Journal Page Range
p. 835-840
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.