Switching processes in TGS crystals irradiated by high-current electron beam

The relaxation processes study of the dielectric permittivity ε during commutation of the external electric field in triglycine sulphate (NH2CH2COOH)3 · H2SO4 (TGS) single crystal plates before and after irradiation by a high-current pulsed electron beam with different doses at various temperatures is presented. The parameters of the electron beam produced by the accelerator facility as a source were: energy E = 250 keV, current density I = 1000 A/cm2, fluence F = 15 J/cm2, pulse duration τ = 300 ns, beam density 5·15 electrons/cm2 per pulse. It was shown that the dependences of ε (t) are described by the Kohlrausch law: ε (t) ∼ exp (-t/τ)α, where α is the average relaxation time of the all volume samples, 0 < α <1. Besides, it was found that switching processes in the irradiated crystals were much more intensive than those in the non-irradiated ones. The relaxation times decrease with rising of temperature up to the phase transition during commutation of the small external electric field. (author)