Published April 2006
| Version v1
Journal article
Defect generation in CuInSe2 chalcopyrite semiconductor compound by electron irradiation
Creators
- 1. Inst. Fiziki Tverdogo Tela i Poluprovodnikov NAN Belarusi, Minsk (Belarus)
- 2. Univ. Stratklajd, Glazgo (United Kingdom)
- 3. NII Yadernoj Fiziki im. D.V. Skobel'tsyna Moskovskogo Gosudarstvennogo Univ. im. M.V. Lomonosova, Moscow (Russian Federation)
Description
The electron irradiation induced defects in CuInSe2 single crystals were detected using the low-temperature (4.2 K) photoluminescence. Three peaks at 1.0215, 1.0102 and 0.9909 eV in the near-band edge region associated with point radiation defects have been revealed
Abstract (Russian)
С использованием низкотемпературной (4.2 К) фотолюминесценции изучены процессы радиационного дефектообразования в совершенных монокристаллах CuInSe2. Обнаружены оптически активные радиационные дефекты, ответственные за появление в спектрах люминесценции линий ∼1.0215,1.0102 и 0.9909 эВAdditional details
Additional titles
- Original title (Russian)
- Образование дефектов в халькопиритном полупроводниковом соединении CuInSe
Publishing Information
- Journal Title
- Poverkhnost'. Rentgenovskie, Sinkhrotronnye i Nejtronnye Issledovaniya
- Journal Issue
- no.4
- Journal Page Range
- p. 51-54
- ISSN
- 1028-0960
Conference
- Title
- 35. conference on physics of interaction of charged particles with crystals
- Original Conference Title
- XXXV Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 27-29 May 2005
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 39021254
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHALCOPYRITE; ELECTRON BEAMS; EMISSION SPECTRA; MEV RANGE 01-10; MONOCRYSTALS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DOSES; EMISSION; ENERGY RANGE; LEPTON BEAMS; LUMINESCENCE; MATERIALS; MEV RANGE; MINERALS; PARTICLE BEAMS; PHOTON EMISSION; RADIATION EFFECTS; SPECTRA; SULFIDE MINERALS
Optional Information
- Notes
- 11 refs., 4 figs.