Published April 2006 | Version v1
Journal article

Defect generation in CuInSe2 chalcopyrite semiconductor compound by electron irradiation

  • 1. Inst. Fiziki Tverdogo Tela i Poluprovodnikov NAN Belarusi, Minsk (Belarus)
  • 2. Univ. Stratklajd, Glazgo (United Kingdom)
  • 3. NII Yadernoj Fiziki im. D.V. Skobel'tsyna Moskovskogo Gosudarstvennogo Univ. im. M.V. Lomonosova, Moscow (Russian Federation)

Description

The electron irradiation induced defects in CuInSe2 single crystals were detected using the low-temperature (4.2 K) photoluminescence. Three peaks at 1.0215, 1.0102 and 0.9909 eV in the near-band edge region associated with point radiation defects have been revealed

Abstract (Russian)

С использованием низкотемпературной (4.2 К) фотолюминесценции изучены процессы радиационного дефектообразования в совершенных монокристаллах CuInSe2. Обнаружены оптически активные радиационные дефекты, ответственные за появление в спектрах люминесценции линий ∼1.0215,1.0102 и 0.9909 эВ

Additional details

Additional titles

Original title (Russian)
Образование дефектов в халькопиритном полупроводниковом соединении CuInSe

Publishing Information

Journal Title
Poverkhnost'. Rentgenovskie, Sinkhrotronnye i Nejtronnye Issledovaniya
Journal Issue
no.4
Journal Page Range
p. 51-54
ISSN
1028-0960

Conference

Title
35. conference on physics of interaction of charged particles with crystals
Original Conference Title
XXXV Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
27-29 May 2005
Place
Moscow (Russian Federation)

Optional Information

Notes
11 refs., 4 figs.