Published 1996 | Version v1
Book Metadata-only

Neutron induced damage in GaAs MESFETs

Creators

  • 1. Universita di Padova (Italy)

Description

Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinch-off voltage, open-channel saturation current, and transconductance in agreement with previous results. In this work we demonstrate how an experimental technique, based on the frequency dispersion of the transconductance, gm(f), and output conductance, gD(f), can identify the deep levels induced by neutron irradiation through measurements performed directly on packaged devices. After irradiation, a frequency dispersion of the transconductance has been observed, while it was flat in the unirradiated device. The gm(f) curve shape depends on the device bias conditions, and it has permitted for the first time to evaluate the activation energy of different deep levels induced by neutron irradiation in MESFETs

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (United States)
Imprint Title
1996 IEEE nuclear science symposium - conference record. Volumes 1, 2 and 3
Imprint Pagination
2138 p.
Journal Page Range
p. 256-260.

Conference

Title
Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference.
Dates
2-9 Nov 1996.
Place
Anaheim, CA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
28068978
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DAMAGING NEUTRON FLUENCE; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; MOSFET; PHYSICAL RADIATION EFFECTS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; MOS TRANSISTORS; NEUTRON FLUENCE; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Secondary number(s)
CONF-961123--.