Simultaneous probing of nanocrystal (NC)-ligand interaction-induced charge transfer/transport properties at the electron donor (lead selenide NC)/acceptor (zinc oxide) functional interface
Creators
- 1. Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791 (Korea, Republic of)
- 2. Nanophotonics Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)
Description
Highlights: • We developed a test platform to enable simultaneous probing of charge transfer and transport. • From the ZnO/PbSe contact resistance interface charge transfer and transport were quantified. • Highly efficient charge transfer at the donor/acceptor interface can be achieved through optimized NC-ligand interaction. -- Abstract: Understanding correlation between interfacial charge transfer and transport at the electron donor/acceptor functional interface has remained elusive despite its impact on the optoelectronic devices because the conventional vertically stacked diode structure as well as energetic and morphological disorder at the interface complicates analysis of the interfacial region. We fabricated a test platform to enable simultaneous probing of charge transfer and transport at the nanocrystal (NC)/metal oxide interface. Using the transmission line method (TLM) in a ZnO/PbSe/ZnO test structure, we measured the ZnO/PbSe contact resistance from which interfacial charge transfer and transport properties can be correlated in relation to interfacial energetics depending on the size of PbSe NC. The interfacial transfer-transport test probe was validated by comparing size dependent energy level offset derived from the contact resistance value with the established trend. Importantly, by altering the chemical nature of the molecules attached to the NC surface, we discovered that charge transport properties including mobility in the PbSe channel away from the interface are extended into the interfacial region, enabling correlation between carrier diffusion and the electrical mobility at the electron donor/acceptor interface. With a very low mobility in the interface region, charge transfer associated with carrier diffusion is suggested to reflect the nature of energetic disordered interfacial region rather than the electrical mobility.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2018.10.016Additional details
Identifiers
- DOI
- 10.1016/j.physb.2018.10.016;
- PII
- S0921452618306409;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 553
- Journal Page Range
- p. 40-46
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54125686
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; ELECTRONS; ENERGY LEVELS; LEAD; LEAD SELENIDES; MOLECULES; OPTOELECTRONIC DEVICES; QUANTUM DOTS; SURFACES; VALENCE; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; EQUIPMENT; FERMIONS; LEAD COMPOUNDS; LEPTONS; METALS; NANOSTRUCTURES; OPTICAL EQUIPMENT; OXIDES; OXYGEN COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TRANSDUCERS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2018 Published by Elsevier B.V.