Published July 1977
| Version v1
Journal article
Semiconductors dielectric constant via chemical binding
Creators
- 1. Massachusetts Inst. of Tech., Cambridge (USA). Dept. of Physics
- 2. Universidade Estadual de Campinas (Brazil). Instituto de Fisica
Description
no abstract available
Additional details
Additional titles
- Original title (Portuguese)
- Constante dieletrica de semicondutores via ligacao quimica
Publishing Information
- Journal Title
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Volume
- 29
- Journal Issue
- 7
- Series
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Page Range
- 303
Conference
- Title
- 29. Annual Meeting of the Brazilian Society for the Advancement of Science.
- Dates
- 7 - 13 Jul 1977.
- Place
- Brasilia, Brazil.
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 10421972
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- BAND THEORY; BINDING ENERGY; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; ENERGY GAP; IONIZATION; KRAMERS-KRONIG CORRELATION; SEMICONDUCTOR MATERIALS; VALENCE; WAVE FUNCTIONS
- Descriptors DEC
- CORRELATIONS; ELECTRICAL PROPERTIES; ENERGY; FUNCTIONS; PHYSICAL PROPERTIES
Optional Information
- Notes
- Published in summary form only.