Published November 18, 2013 | Version v1
Journal article

High spin polarization at room temperature in Ge-substituted Fe3O4 epitaxial thin film grown under high oxygen pressure

  • 1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

Description

Epitaxial thin films of room-temperature ferrimagnetic (Fe,Ge)3O4 were fabricated using pulsed laser deposition. Films with a single-phase spinel structure were grown under high oxygen pressures (0.01–0.6 Pa). The carrier transport across (Fe,Ge)3O4/Nb:SrTiO3 interface was studied to estimate the spin polarization of (Fe, Ge)3O4. Current–voltage curves of Fe2.8Ge0.2O4/Nb:SrTiO3 junction showed rectifying behavior even at 300 K whereas Fe3O4/Nb:SrTiO3 junction showed ohmic behavior. Calculations based on a model for a Schottky contact with a ferromagnetic component yielded a spin polarization of 0.50 at 300 K for Fe2.8Ge0.2O4, indicating its potential as a promising spin injector

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
103
Journal Issue
21
Journal Page Range
p. 212404-212404.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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