Three-mode entanglement via tunneling-induced interference in a coupled triple-semiconductor quantum-well structure
Creators
- 1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)
- 2. School of Physics, Ludong University, Yantai 264025 (China)
- 3. Institute of Advanced Nanophotonics State Key Lab of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 (China)
Description
A simple scheme is proposed to achieve three-mode continuous-variable (CV) entanglement in a coupled triple-semiconductor quantum-well (TSQW) structure via tunneling-induced interference. In the present scheme, the TSQW structure is trapped into a triply resonant cavity, and the tunneling-induced interference effects considered here are the key to realizing entanglement. By numerically simulating the dynamics of the system, we show that the strength of tunneling-induced interference can effectively influence the period of entanglement, and the generation of entanglement does not depend intensively on the initial condition of the cavity field in our scheme. As a result, the present research provides an efficient approach to achieve three-mode CV entanglement in a semiconductor nanostructure, which may have an impact on the progress of solid-state quantum-information theory.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. A
- Journal Volume
- 82
- Journal Issue
- 1
- Journal Page Range
- p. 012323-012323.8
- ISSN
- 1050-2947
- CODEN
- PLRAAN
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42052101
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- INTERFERENCE; QUANTUM ENTANGLEMENT; QUANTUM INFORMATION; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SOLIDS; TRAPPING; TUNNEL EFFECT
- Descriptors DEC
- INFORMATION; MATERIALS; NANOSTRUCTURES
Optional Information
- Notes
- (c) 2010 The American Physical Society