Published July 2010 | Version v1
Journal article

Three-mode entanglement via tunneling-induced interference in a coupled triple-semiconductor quantum-well structure

  • 1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)
  • 2. School of Physics, Ludong University, Yantai 264025 (China)
  • 3. Institute of Advanced Nanophotonics State Key Lab of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 (China)

Description

A simple scheme is proposed to achieve three-mode continuous-variable (CV) entanglement in a coupled triple-semiconductor quantum-well (TSQW) structure via tunneling-induced interference. In the present scheme, the TSQW structure is trapped into a triply resonant cavity, and the tunneling-induced interference effects considered here are the key to realizing entanglement. By numerically simulating the dynamics of the system, we show that the strength of tunneling-induced interference can effectively influence the period of entanglement, and the generation of entanglement does not depend intensively on the initial condition of the cavity field in our scheme. As a result, the present research provides an efficient approach to achieve three-mode CV entanglement in a semiconductor nanostructure, which may have an impact on the progress of solid-state quantum-information theory.

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. A
Journal Volume
82
Journal Issue
1
Journal Page Range
p. 012323-012323.8
ISSN
1050-2947
CODEN
PLRAAN

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42052101
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
Descriptors DEI
INTERFERENCE; QUANTUM ENTANGLEMENT; QUANTUM INFORMATION; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SOLIDS; TRAPPING; TUNNEL EFFECT
Descriptors DEC
INFORMATION; MATERIALS; NANOSTRUCTURES

Optional Information

Notes
(c) 2010 The American Physical Society