Determination of thickness of the mechanically distorted surface layer in silicon and germanium by the mutual grinding method

The publication describes a new method of measuring the thickness of the mechanically damaged layer of silicon and germanium by mutual grinding method. It is shown that the ratio of the ground-off masses at various stages of mutual grinding is characterized by a sharp drop in the heavily damaged superficial layer and by a gentle drop in the sublayer which features residual mechanical stress. The thickness of the heavily damaged layer depends on the size of the abrasive grains. Structural distortions in silicon extend to a greater depth than in germanium