Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes

Operation of semiconductor lasers in the 20–50 µm wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at λ = 26, …, 30 µm at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses. (paper)