Published August 16, 1980
| Version v1
Journal article
Strain profiles in ion-doped silicon obtained from X-ray rocking curves
Creators
- 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
- 2. Ksesoyuznyj Nauchno-Issledovatel'skij Inst. Nauchpribory Leningrad (USSR)
Description
A rapid numerical method of the calculation of X-ray rocking curves (RC) from crystals with thin surface damaged layers is developed on the basis of a semi-kinematical approach. The determination of the strain profile in the layer from experimental RC's by a 'best correspondence' fitting procedure is demonstrated. Strain profiles in Si crystals doped with boron ions with energy from 40 to 100 keV are obtained and discussed in comparison with the distributions of impurity atoms and radiation defects found by other experimental techniques. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 60
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 381-389
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 12586619
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON 11 BEAMS; BRAGG REFLECTION; DEPTH; DOPED MATERIALS; ION IMPLANTATION; KEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION; STRAINS; X RADIATION
- Descriptors DEC
- BEAMS; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; ION BEAMS; IONIZING RADIATIONS; KEV RANGE; RADIATION EFFECTS; RADIATIONS; REFLECTION; SEMIMETALS