Published 2017 | Version v1
Book

Analysis of residual stress in W/B4C multilayer

  • 1. Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)
  • 2. School of Studies in Electronics and Photonics, Pt. Ravishankar Shukla University, Raipur-492010 (India)
  • 3. Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)

Description

The microstructure and residual stress are investigated in periodic W/B4C x-ray multilayers (MLs) as a function of the number of layer pairs (N) varying from 20 to 400 at a fixed periodicity, d ∼ 1.9 nm. The microstructure is analyzed using the x-ray reflectivity (XRR) and rocking scan method whereas stress is analyzed using both curvature measurement method by Fizeau interferometer and grazing incident x-ray diffraction (GIXRD) using synchrotron. The successive order Bragg peaks indicates good quality of ML structure in terms of interface roughness. As N increases, roughness of B4C and W varies in the range of 0.15-0.22 nm and 0.26-0.44 nm, respectively. The residual stress of the ML film and W layers are compressive in nature. The compressive residual stress of W/B4C multilayer film and the W layers decreases as the number of layer pair increases, and discussed. (author)

Part of:
Proceedings of the seventeenth international conference on thin films: abstracts

Additional details

Publishing Information

Publisher
CSIR-National Physical Laboratory
Imprint Place
New Delhi (India)
Imprint Title
Proceedings of the seventeenth international conference on thin films: abstracts
Imprint Pagination
236 p.
Journal Page Range
p. 106

Conference

Title
17. international conference on thin films
Acronym
ICTF-2017
Dates
13-17 Nov 2017
Place
New Delhi (India)

Optional Information