Effect of substrate thickness on coating roughness Ti/AlTiN during interaction process Parameter
Creators
- 1. MAl-Mussaib Technical Institute /Al-Furat Al-Awsat Technical University, 51009 Babylon (Iraq)
Description
Ti/TiAlN coatings were deposited on tungsten carbide substrates and consist of the target Ti0.5Al0.5 using sputtering system is one of the main techniques which done be coating substrate. This research aimed is to develop the model a PVD magnetron sputtering process that can predict the relationship between process input parameters and the resulting coating properties and performance. RSM Response Surface Methodology was used, one of the most cost-effective and practical techniques to develop the process model. The influence of substrate thickness on the structural properties of the coatings was investigated and the effect of bias voltage on the microstructure was investigated. The number of crystallite grain size reduced with the increase of the bias voltage then reduce minimum roughness 0.07157 (µm) and became maximum roughness 0.7856 (µm). The crystalline grain size of the coatings increased as the bias voltage was raised from 50 to 75 V, and then decreased with further increase of the bias voltage. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/454/1/012002Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 454
- Journal Issue
- 1
- Journal Page Range
- [11 p.]
- ISSN
- 1757-899X
Conference
- Title
- International Conference on Materials Engineering and Science
- Dates
- 8 Aug 2018
- Place
- Istanbul (Turkey)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52102617
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COATINGS; DEPOSITS; ELECTRIC POTENTIAL; GRAIN SIZE; MAGNETRONS; PERFORMANCE; ROUGHNESS; SUBSTRATES; SURFACES; TUNGSTEN CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; MICROSTRUCTURE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; REFRACTORY METAL COMPOUNDS; SIZE; SURFACE PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS