A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement

A new lateral insulated-gate bipolar transistor with a controlled anode (CA-LIGBT) on silicon-on-insulator (SOI) substrate is reported. Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path, CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT, which we presented earlier. As the simulation results show, the ratios of figure of merit (FOM) for CA-LIGBT compared to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45: 1 and 59.53: 1, respectively. And, the new devices can be created by using additional silicon direct bonding (SDB). So, from the power efficiency point of view, the proposed CA-LIGBT is a promising device for use in power ICs. (semiconductor devices)