Structural and electrical properties of quantum wells with nanoscale InAs inserts in InyAl1−yAs/InxGa1−xAs heterostructures on InP substrates

A complex study of the effect ofintroduction of nanoscale InAs inserts of different thicknesses into an In0.53Ga0.47As quantum well on the electrical properties and structural features of In0.50Al0.50As/In0.53Ga0.47As/In0.50Al0.50As nanoheterostructures with bilateral δ-Si doping grown on InP substrates has been performed. The layers of nanoheterostructures with a weak lattice mismatch are found to be equally (cube-on-cube) oriented. The introduction of a nanoscale InAs insert leads to an increase in mobility. At an insert thickness of about 1.8 nm, the effect of increasing mobility is saturated due to structural deterioration. The segregation of the second (apparently, wurtzite) phase is revealed; this process, as well as the formation of other defects in the nanoheterostructure layers, is due to local strains caused by variations of the indium content in the layers.