Molecular effect during light ion implantation in semiconductors

Accumulation of structural defects in Si during implantation of the nitrogen single and two-atom ions under equivalent conditions was studied. The molecular effect in defects accumulation was observed only by doses, whereby the degree of the crystal lattice damage exceeded 0.15. Under such conditions the N2+ ion produced the same number of stable defects as six N1+ ions. The amorphization doses in our experiments (30 keV for N1+ flux and 60 keV for N2+ flux at the room temperature) were equal to 3.75 x 1015 and 1.25 x 1015 ion/cm2 for N1+ and N2+ correspondingly