Published December 2018
| Version v1
Journal article
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures
Creators
- 1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
- 2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
Description
The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 52
- Journal Issue
- 12
- Journal Page Range
- p. 1586-1589
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49107173
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM COMPOUNDS; MERCURY TELLURIDES; PHOTOCONDUCTIVITY; QUANTUM WELLS; WAVELENGTHS
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MERCURY COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.