Induced superconductivity in superlattice

Results of measuring resistance and magnetic properties of a surface barrier in SiC crystals of n-type depending on the shift are presented. The Schottky barrier is created by applying Au or Cr layer. Measurements of sample resistance at different negative shifts are performed by four-probe method with alternating current at 77 and 300 K temperatures. It is shown that application of a negative shift to the barrier leads to the production of a region with high conductivity which is obviously connected with the space charge region (SCR). The data obtained allow one to assume that under the filling of two lower superlattice minizones by electron state injection, electron grouping with the production of a superconducting state is possible