Research progress on 28 nm SoC single event effect irradiation test

For the 28 nm Xilinx Zynq-7000 SoC, spallation neutron, medium energy proton and heavy ion microbeam single event effect irradiation tests were performed for the first time in China. In the spallation neutron irradiation, the single event effect sensitivity of on chip memory, LI D-Cache and block memory is obtained. The single event effects of on chip memory at 90 MeV and 70 MeV proton irradiations are tested under medium proton irradiation. In the heavy ion microbeam irradiation test, the single event effect sensitivity spots distributions of on chip memory, LI D-Cache, arithmetic logic unit, floating point unit and peripherals are achieved. (authors)