Published September 1984 | Version v1
Journal article

Temperature coefficient of resistance and annealing characteristics of yttrium films

  • 1. Moncton Univ., New Brunswick (Canada). Dept. of Physics

Description

The authors report the annealing behaviour and temperature coefficient of resistance (TCR) of yttrium films deposited in a vacuum of 2 X 10-9 Torr. Yttrium films of thickness 50, 110, 200 and 2950 A were deposited onto clean quartz substrates. (Auth.)

Additional details

Publishing Information

Journal Title
J. Less-Common Met.
Journal Volume
102
Journal Issue
1
Series
J. Less-Common Met.
Journal Page Range
L15-L18
ISSN
0022-5088

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
15071961
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ACTIVATION ENERGY; ANNEALING; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; FILMS; HIGH TEMPERATURE; MEDIUM TEMPERATURE; TEMPERATURE DEPENDENCE; THICKNESS; ULTRAHIGH VACUUM; YTTRIUM
Descriptors DEC
DATA; DIMENSIONS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; HEAT TREATMENTS; INFORMATION; METALS; NUMERICAL DATA; PHYSICAL PROPERTIES; TRANSITION ELEMENTS