Interface effects in the model of δ-potential for 2D semiconductor quantum structures

Here we show the enhancement of exchange field at the nonmagnetic-semimagnetic semiconductor interface can be described by δ-localized exchange field. In this model, the wave functions of electron confined in quantum well with semimagnetic barriers can be found analytically for an arbitrary orientation of magnetic field B with respect to growth axis C. Two cases corresponding to B parallel to C and B perpendicular to C are considered. The comparison of present approach with experimental data shows that the proposed method is an efficient tool for interface investigation in 2D quantum structures. (author)