Published April 4, 1988
| Version v1
Journal article
Damage assessment in low-dose Si-implanted GaAs by Raman spectroscopy
Creators
- 1. Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Eckerstrasse 4, 7800 Freiburg, West Germany
Description
Allowed and forbidden first-order as well as resonant second-order Raman scattering has been used to study implantation damage in low-dose (5 x 1011--1 x 1013 cm-2) 29Si+-implanted GaAs. Symmetry forbidden scattering by longitudinal optical (LO) phonons and allowed 2LO scattering were found to be most sensitive to lattice damage for the range of implantation doses given above. The intensity ratio of the 2LO peak to the forbidden LO phonon line measures variations in the implantation dose with an accuracy better than +- 7% for an average dose of 2 x 1012 cm-2. The potential of spatially resolved Raman spectroscopy for the assessment of homogeneity in as-implanted GaAs wafers has been demonstrated
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 52
- Journal Issue
- 14
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 1158-1160
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19058076
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GALLIUM ARSENIDES; ION IMPLANTATION; PHONONS; PHYSICAL RADIATION EFFECTS; RAMAN SPECTROSCOPY; SILICON IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; GALLIUM COMPOUNDS; IONS; LASER SPECTROSCOPY; QUASI PARTICLES; RADIATION EFFECTS; SPECTROSCOPY