Published May 16, 1988 | Version v1
Journal article Metadata-only

Influence of argon implantation on the formation of platinum silicides

Creators

  • 1. Minskij Radiotekhnicheskij Inst. (Byelorussian SSR)

Description

The structural and phase composition features of platinum silicides formed by rapid thermal annealing of argon ion implanted and unimplanted platinum films (40 nm thickness) deposited onto (111) silicon substrates have been investigated by transmission electron microscopy and electron diffraction techniques. Quantitative data of the average grain size of silicides formed by pulse heat treatment at temperatures between 500 and 800 0C are shown. The results indicate that argon implantation considerable influences the process of phase formation and structure of the platinum silicide layer

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
107
Journal Issue
1
Series
Phys. Status Solidi A.
Journal Page Range
K33-K35
ISSN
0031-8965
CODEN
PSSAB

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
19102245
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
ARGON 40 BEAMS; CHEMICAL COMPOSITION; CRYSTALLIZATION; ELECTRON DIFFRACTION; FILMS; GRAIN SIZE; HEAT TREATMENTS; ION IMPLANTATION; MONOCRYSTALS; PHASE STUDIES; PLATINUM; PLATINUM SILICIDES; POLYCRYSTALS; SILICON; TRANSMISSION ELECTRON MICROSCO
Descriptors DEC
BEAMS; COHERENT SCATTERING; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; ION BEAMS; METALS; MICROSCOPY; MICROSTRUCTURE; PHASE TRANSFORMATIONS; PLATINUM COMPOUNDS; PLATINUM METALS; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SIZE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
Short note.