Published February 1, 2021 | Version v1
Journal article

Enhancing SiN waveguide optical nonlinearity via hybrid GaS integration

  • 1. Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)
  • 2. Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau (France)
  • 3. STMicroelectronics, Silicon Technology Development, 38926 Crolles (France)
  • 4. Department of Physics, Bridgewater State University, Bridgewater, MA 02325 (United States)

Description

Silicon nitride (SiN) has been demonstrated as an exceptional low-loss platform for integrated photonics, however, its relatively small nonlinear refractive index limits its full potential in applications such as all-optical phase modulation, supercontinuum generation, and frequency combs. Here, we demonstrate that through hybrid integration with wide-bandgap 2D materials such as gallium sulfide (GaS), the nonlinear refractive index of the hybrid waveguide can be greatly increased (by five-fold in our experiment). We fabricate high quality factor SiN/GaS microring resonators, with low two-photon absorption at telecom wavelengths, to demonstrate enhanced all-optical modulation. We show that the hybrid platform is suitable for assessing the nonlinear properties of 2D materials, and we have used it to quantify, for the first time, the nonlinear refractive index (n 2) of GaS. For GaS, n 2 = 12 × 10 19   m 2 W 1 , which is ten times larger than that of SiN. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2040-8986/abe7d7

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Optics (Online)
Journal Volume
23
Journal Issue
2
Journal Page Range
[6 p.]
ISSN
2040-8986