Published September 2010 | Version v1
Journal article

Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD

  • 1. Department of Physics, University of Science and Technology of China, Hefei 230026 (China)

Description

ZnO films are grown on Si (111) substrates by a metal organic chemical vapor deposition method. Samples with different stoichiometric composition of Zn and O are obtained by varying II/VI molar ratio between 3 and 1/3 in precursors. The x-ray photoelectron spectroscopy and photoluminescence results show that the ultraviolet emission enhances with the increasing Zn/O composition ratio of the samples. It is suggested that the superfluous Zn atoms pile up at interstitial positions to form Zn interstitial defects. The radiated recombination of the coupling of free excitons with donor Zn interstitial enhances the ultraviolet emission of the samples

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/27/9/096101

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
27
Journal Issue
9
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU