Published August 27, 2007
| Version v1
Journal article
Inelastic strain relaxation in the Ge quantum dot array
- 1. Institute of Semiconductor Physics, Siberian Brunch of RAS, Lavrentyev Ave. 13, 630090 Novosibirsk (Russian Federation)
Description
Raman spectra of Si/Ge/Si (100) structures with Ge quantum dots (QDs) obtained by means of the low-temperature (200-300 deg. C) molecular beam epitaxy are investigated. An extremely narrow Ge phonon line of the 'anomalously' high intensity and a doublet structure of the Ge-Si mode are observed. These features are explained by the formation of a pure pseudomorphic state of a QD array to a Si substrate. Additional broad Ge phonon lines related to inelastic strain relaxation are found under the variation of growth conditions. The observed strain relaxation is strongly nonuniform for the two well known mechanisms of inelastic strain relaxation
Additional details
Identifiers
- DOI
- 10.1063/1.2772754;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 91
- Journal Issue
- 9
- Journal Page Range
- p. 093127-093127.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39038342
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; PHONONS; QUANTUM DOTS; RAMAN SPECTRA; RELAXATION; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; MATERIALS; METALS; NANOSTRUCTURES; QUASI PARTICLES; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2007 American Institute of Physics