Published April 2009 | Version v1
Journal article

Organic field-effect transistors using single crystals

  • 1. Photonics Research Institute (PRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan)
  • 2. Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka 560-0043 (Japan)

Description

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm2 Vs-1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/1468-6996/10/2/024314

Additional details

Publishing Information

Journal Title
Science and Technology of Advanced Materials
Journal Volume
10
Journal Issue
2
Journal Page Range
[16 p.]
ISSN
1468-6996

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42046668
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER MOBILITY; CHARGE TRANSPORT; ELECTRON SPIN RESONANCE; FABRICATION; FIELD EFFECT TRANSISTORS; HALL EFFECT; MONOCRYSTALS; REVIEWS; SEMICONDUCTOR MATERIALS; THIN FILMS
Descriptors DEC
CRYSTALS; DOCUMENT TYPES; FILMS; MAGNETIC RESONANCE; MATERIALS; MOBILITY; RESONANCE; SEMICONDUCTOR DEVICES; TRANSISTORS