Published February 5, 1996 | Version v1
Journal article

Comparison of theoretical and experimental electronic distributions of Si-Ni and Si-Er alloys

  • 1. Laboratoire de Chimie Physique Matiere et Rayonnement, Unite de Recherche associee au CNRS 176, Paris (France)
  • 2. Institute for Solid State Physics, Eoetvoes University, Budapest (Hungary)
  • 3. Laboratoire d'Etudes des Propietes Electroniques des Solides CNRS, BP 166X, Grenoble (France)
  • 4. Naval Research Laboratory, Department of the Navy, Code 4690, Washington, DC (United States)

Description

The total and partial densities of states of SiNi3, Si2Ni and Si1.7Y have been calculated using a scalar relativistic self-consistent augmented plane-wave method (SiNi3) or a self-consistent linear muffin-tin orbital method in the atomic sphere approximation (Si2Ni and Si1.7Y). The x-ray photoemission valence band and soft-x-ray emission Si Kβ and Ni Lα spectra have been calculated by applying appropriate broadening factors to the theoretical densities-of-states curves; in the case of the x-ray photoemission spectra, photoionization cross sections have been taken into account. Very good agreement is found between the experimental x-ray photoemission and soft-x-ray emission spectra and the simulated spectral curves. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
8
Journal Issue
6
Journal Page Range
p. 719-728
ISSN
0953-8984