Published February 5, 1996
| Version v1
Journal article
Comparison of theoretical and experimental electronic distributions of Si-Ni and Si-Er alloys
Creators
- 1. Laboratoire de Chimie Physique Matiere et Rayonnement, Unite de Recherche associee au CNRS 176, Paris (France)
- 2. Institute for Solid State Physics, Eoetvoes University, Budapest (Hungary)
- 3. Laboratoire d'Etudes des Propietes Electroniques des Solides CNRS, BP 166X, Grenoble (France)
- 4. Naval Research Laboratory, Department of the Navy, Code 4690, Washington, DC (United States)
Description
The total and partial densities of states of SiNi3, Si2Ni and Si1.7Y have been calculated using a scalar relativistic self-consistent augmented plane-wave method (SiNi3) or a self-consistent linear muffin-tin orbital method in the atomic sphere approximation (Si2Ni and Si1.7Y). The x-ray photoemission valence band and soft-x-ray emission Si Kβ and Ni Lα spectra have been calculated by applying appropriate broadening factors to the theoretical densities-of-states curves; in the case of the x-ray photoemission spectra, photoionization cross sections have been taken into account. Very good agreement is found between the experimental x-ray photoemission and soft-x-ray emission spectra and the simulated spectral curves. (author)
Availability note (English)
Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://www.iop.org/;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 8
- Journal Issue
- 6
- Journal Page Range
- p. 719-728
- ISSN
- 0953-8984
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- Poland
- INIS RN
- 32026941
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPUTERIZED SIMULATION; CROSS SECTIONS; ENERGY-LEVEL DENSITY; ERBIUM ALLOYS; INTERMETALLIC COMPOUNDS; LINE BROADENING; NICKEL ALLOYS; PHOTOEMISSION; PHOTOIONIZATION; SELF-CONSISTENT FIELD; SILICON ALLOYS; X-RAY EMISSION ANALYSIS
- Descriptors DEC
- ALLOYS; CHEMICAL ANALYSIS; EMISSION; IONIZATION; NONDESTRUCTIVE ANALYSIS; RARE EARTH ALLOYS; SECONDARY EMISSION; SIMULATION; TRANSITION ELEMENT ALLOYS