Gate modulation of below-band-gap photoconductivity in ZnO nanowire field-effect-transistors

We investigated the modulation of the photoconductivity under below-band gap excitation in single ZnO nanowire field effect transistors. Light excitation at 550 nm does not induce any change in the drain–source current when the gate voltage is kept at V_gs = 0 V, but results in a current increase when it is set to V_gs = −50 V. At this negative value of the gate voltage we further investigated the photo-reaction in the below-band-gap range 400–800 nm, observing a qualitative similar profile for all the photo-current curves. These results were attributed to a local effect, suggesting that the change in conductivity is due to the release of electrons from interface states located between the ZnO nanowire active channel and the gate dielectric SiO₂. (paper)