Published June 2016 | Version v1
Journal article

Estimation of frequency conversion efficiency of THz devices using a ballistic electron wave swing circuit model

  • 1. Institute of Microwaves and Photonics, Cauerstr. 9, D-91058 Erlangen (Germany)
  • 2. Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor D.E. (Malaysia)
  • 3. Institute for Microwave Engineering and Photonics, Technical University Darmstadt, Merckstr. 25, D-64283, Darmstadt (Germany)

Description

The ballistic electron wave swing device has previously been presented as a possible candidate for a simple power conversion technique to the THz -domain. This paper gives a simulative estimation of the power conversion efficiency. The harmonic balance simulations use an equivalent circuit model, which is also derived in this work from a mechanical model. To verify the validity of the circuit model, current waveforms are compared to Monte Carlo simulations of identical setups. Model parameters are given for a wide range of device configurations. The device configuration exhibiting the most conforming waveform is used further for determining the best conversion efficiency. The corresponding simulation setup is described. Simulation results implying a conversion efficiency of about 22% are presented. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/31/6/065003

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
31
Journal Issue
6
Journal Page Range
[7 p.]
ISSN
0268-1242
CODEN
SSTEET