Published January 1, 2008
| Version v1
Report
Status of high polarization DC high voltage Gallium Arsenide photoelectron guns
Description
Users receive very high beam polarization from reliable GaAs photoelectron guns at facilities worldwide. Satisfaction with beam quality (and a number of lab closures) has reduced the level of polarized source R and D from the heyday of 1990s. However, new experiments and new accelerators proposals including high current unpolarized machines, require GaAs photoguns with capabilities that exceed today's state of the art. This submission describes the capabilities of today's high-polarization DC high voltage GaAs photoguns and discusses issues that must be addressed to meet new demands.
Availability note (English)
Available from Thomas Jefferson National Accelerator Facility, Newport News, VA (US)Additional details
Identifiers
Publishing Information
- Imprint Pagination
- vp.
- Report number
- JLAB-ACC--07-680
Conference
- Title
- PAC 2007
- Dates
- 25-29 Jun 2007
- Place
- Albuquerque, NM (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 42102000
- Subject category
- S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ACCELERATORS; CLOSURES; GALLIUM ARSENIDES; POLARIZATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; PNICTIDES
Optional Information
- Contract/Grant/Project number
- AC05-06OR23177
- Notes
- doi 10.1109/PAC.2007.4440108
- Funding organization
- USDOE Office of Science (United States)
- Secondary number(s)
- DOE/OR--23177-1821