Suppression of grain growth in nanocrystalline Bi2Te3 through oxide particle dispersions
- 1. Department of Materials, Imperial College, London SW7 2AZ (United Kingdom)
- 2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
Description
The strategy of suppressing grain growth by dispersing nanoscale particles that pin the grain boundaries is demonstrated in a nanocrystalline thermoelectric compound. Yttria nanoparticles that were incorporated by mechanical alloying enabled nanocrystalline (i.e., d < 100 nm) Bi2Te3 to be retained up to a homologous temperature of 0.94 Tm for durations over which the grain size of the unreinforced compound grew to several microns. The nanostructure appeared to saturate at a grain size that depended on volume fraction (f) according to an f −1/3 relationship, in accordance with theoretical models in the limit of high volume fractions of particles. Interestingly, at low temperatures, the particles stimulate enhanced grain growth over the unreinforced compound, due to particle-stimulated nucleation of recrystallization. To help prevent this effect, in-situ composites formed by internal oxidation of yttrium are compared with those made ex-situ by incorporation of yttria nanoparticles, with the result that the in-situ dispersion eliminates recrystallization at low temperatures and therefore improves nanostructure stabilization. These developments offer a pathway to thermally stabilized bulk nanocrystalline thermoelectrics processed via a powder route
Additional details
Identifiers
- DOI
- 10.1063/1.4901235;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 116
- Journal Issue
- 17
- Journal Page Range
- p. 173505-173505.9
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46108338
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH TELLURIDES; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE; NANOPARTICLES; NANOSTRUCTURES; NUCLEATION; POWDERS; RECRYSTALLIZATION; YTTRIUM OXIDES
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PARTICLES; SIZE; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC