Formation of defects in pure quartz glass by large dose gamma ray irradiation
- 1. Shonan Inst. of Tech., Fujisawa, Kanagawa (Japan)
Description
Since pure quarts glass has the excellent optical characteristics, it is regarded as important as the materials for optical elements and optical fibers. However, the environment of using them has become severe, consequently, various problems have occurred. The change in the physical properties of glass in radiation environment is one of them. The study in the environment of large dose gamma ray irradiation more than 100 Mrad is regarded as important practically. This time, for the purpose of further increasing the knowledge, by heightening the gamma ray dose being irradiated to pure quartz glass to 1000 Mrad, the optical absorption and light emission phenomena were examined. The experimental method and the results of the light absorption characteristics and light emission characteristics are reported. In all types of the glasses, NBOHC, Si-Si and E' center arose. The formation of Si-Si and E' center was restrained by the oxygen contained in the glasses. In the glasses of oxygen-lacking type, 2.25 eV light emission band was formed anew. (K.I.)
Additional details
Publishing Information
- Journal Title
- Denki Gakkai Zetsuen Zairyo Kenkyukai Shiryo
- Journal Volume
- EIM-90
- Journal Issue
- 125-138
- Series
- Denki Gakkai Zetsuen Zairyo Kenkyukai Shiryo.
- Journal Page Range
- 57-64
- CODEN
- DGKEE
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 22083773
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; E CENTERS; EMISSION SPECTRA; GAMMA RADIATION; GLASS; LUMINESCENCE; OPTICAL FIBERS; OXYGEN; PHYSICAL RADIATION EFFECTS; QUARTZ; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; FIBERS; IONIZING RADIATIONS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SILICON COMPOUNDS; SPECTRA; VACANCIES