On the delta-type doping of GaAs-based heterostructures with manganese compounds

Heterostructures, which incorporate GaAs/InGaAs/GaAs quantum wells and are doped with spatially remote monatomic Mn layers, are formed on GaAs(001) substrate under conditions of multilayer buildup by the method of molecular-beam epitaxy. Combined studies of the obtained samples were performed by the method of secondary-ion mass spectrometry, by measurements of X-ray diffraction, and using a transmission electron microscope. The heterostructures under study with a doping impurity concentration amounting to 0.5 single layers are elastically stressed and demonstrate planar clearly defined interfaces without visible extended or point defects. A method for visualization of the distribution of the manganese concentration in the three-dimensional GaAs matrix in the vicinity of a quantum well is suggested. According to experimental results, there is a probability for manganese diffusion into the GaAs/InGaAs/GaAs quantum well when the critical thickness of the GaAs buffer layer is decreased to a value smaller than 3 nm.