Published March 1, 2004
| Version v1
Journal article
Erratum: 'Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells' [Appl. Phys. Lett. 83, 1965 (2003)]
- 1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.1650558;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 84
- Journal Issue
- 9
- Journal Page Range
- p. 1612
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36028107
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ELECTRON BEAMS; GALLIUM NITRIDES; INDIUM COMPOUNDS; QUANTUM WELLS; SEGREGATION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- BEAMS; GALLIUM COMPOUNDS; LEPTON BEAMS; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PARTICLE BEAMS; PNICTIDES
Optional Information
- Notes
- (c) 2004 American Institute of Physics