Scanning Auger microscopy for high lateral and depth elemental sensitivity

Highlights: •SAM performances and limitations are illustrated on real practical cases such as the analysis of nanowires and nanodots. •High spatial elemental resolution is shown with the analysis of reference semiconducting Al0.7Ga0.3As/GaAs multilayers. •High in-depth elemental resolution is also illustrated. Auger depth profiling with low energy ion beams allows revealing ultra-thin layers (∼1 nm). •Analysis of cross-sectional samples is another effective approach to obtain in-depth elemental information. -- Abstract: Scanning Auger microscopy is currently gaining interest for investigating nanostructures or thin multilayers stacks developed for nanotechnologies. New generation Auger nanoprobes combine high lateral (∼10 nm), energy (0.1%) and depth (∼2 nm) resolutions thus offering the possibility to analyze the elemental composition as well as the chemical state, at the nanometre scale. We report here on the performances and limitations on practical examples from nanotechnology research. The spatial elemental sensitivity is illustrated with the analysis of Al0.7Ga0.3As/GaAs heterostructures, Si nanowires and SiC nanodots. Regarding the elemental in-depth composition, two effective approaches are presented: low energy depth profiling to reveal ultra-thin layers (∼1 nm) and analysis of cross-sectional samples