Published 1984
| Version v1
Journal article
Transport properties of indium antimonide layers
Description
The electrical conductivity, the Hall coefficient, the magnetoresistance, and the Ettinghausen-Nernst effect in polycrystalline InSb layers have been investigated as a function of the temperature. The carrier density and mobility are calculated from the transport properties. The influence of the grain boundaries on the electron mobility is discussed and the Ettinghausen-Nernst coefficient is interpreted by means of the transport theory and by the use of measured carrier densities and mobilities of the samples
Additional details
Additional titles
- Original title (German)
- Transporteigenschaften von Indiumantimonid-Schichten
Publishing Information
- Journal Title
- Int. Wiss. Kolloq. Tech. Hochsch. Ilmenau
- Journal Volume
- 29
- Journal Issue
- 4
- Series
- Int. Wiss. Kolloq. Tech. Hochsch. Ilmenau.
- Journal Page Range
- 77-80
- ISSN
- 0374-3365
Conference
- Title
- 29. international scientific colloquium of the TH Ilmenau.
- Dates
- 29 Oct - 2 Nov 1984.
- Place
- Ilmenau (German Democratic Republic).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 16063392
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ANTIMONIDES; CARRIER DENSITY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ENERGY GAP; EVAPORATION; GRAIN BOUNDARIES; HALL EFFECT; INDIUM COMPOUNDS; LAYERS; MAGNETORESISTANCE; NERNST EFFECT; POLYCRYSTALS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ANTIMONY COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; HEAT TREATMENTS; MICROSTRUCTURE; MOBILITY; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES