Vibrational spectra of hydrogen containing centers in crystalline silicon

Hydrogen and deuterium were implanted into silicon with different impurities content o,p,s,b,B,aL. oN THE BASIS OF THE ANALYSIS OF HARMONIC AND ANHARMONIC PARTS TO THE FREQUENCIES OF sI-h VIBbration, it is established, that repulsion between H atoms in the vacancy-type defects and distortion of the Si-Si bonds of monohydrids in the interstitial-related centers, respectively, are occured increasing and decreasing on comparison with 2062 cm-1 frequency of Si-H vibration at (3) surfce of Si. It is found, that absorption at 800-900 and 1500-1800 cm-1 regions are identified with vibrations of H+ and H- ions. It is shown, that H atom has donor level at the upper part of forbidden zone