Monte Carlo prediction of crater formation by single ion impact on solid surface
Creators
- 1. Dept. de Electricidad y Electronica, Facultad de Ciencias Fisicas, Univ. Complutense, Madrid (Spain)
- 2. Dept. de Fisica Aplicada, Facultat de Ciencies, Univ. d'Alacant (Spain)
Description
A method is presented for predicting the topography changes following the impact of one energetic ion on the plane surface of a monatomic amorphous solid. This is done in two stages. The first is a Monte Carlo calculation of the sputter yield and interior distribution relocated atoms, with no compensation for local departures from equilibrium density. In the second stage there is a systematic relaxation of the solid, in which the density returns to its previous constant value and a crater develops in the surface. Two alternative methods of carrying out stage two are compared. In the first the solid is subdivided into cells within which relaxation is carried out normal to the surface, as in previous one-dimensional studies. The second method treats the solid as a 3-dimensional incompressible medium. Both seem to reproduce quite well the main features found experimentally. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 90
- Journal Issue
- 1-4
- Journal Page Range
- p. 424-428.
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 15. international conference on atomic collisions in solids (ICALS-15).
- Dates
- 26-30 Jul 1993.
- Place
- London (Canada).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 26004385
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; COMPUTERIZED SIMULATION; CRATERS; ION COLLISIONS; KEV RANGE 01-10; MONOCRYSTALS; MONTE CARLO METHOD; ONE-DIMENSIONAL CALCULATIONS; RELAXATION; SILICON IONS; SPATIAL DISTRIBUTION; SPUTTERING; SURFACES
- Descriptors DEC
- CALCULATION METHODS; CAVITIES; CHARGED PARTICLES; COLLISIONS; CRYSTALS; DISTRIBUTION; ENERGY RANGE; IONS; KEV RANGE; SIMULATION